Abstract
Disclosed herein are devices comprising at least one flexible seal,
at least one flexible complex seal having at least one closed cavity
containing a fluid, or a combination thereof. The devices may comprise
at least one immobile and inflexible substrate and at least one mobile
and inflexible substrate capable of movement due to the flexible seal,
the flexible complex seal, or both. The flexible complex seals comprise
at least one closed cavity comprising a fluid, such as a gas or a
liquid. As disclosed, the presence or absence of heat will cause the
mobile and inflexible substrate to move. The movement will increase
or decrease the fluid amount or fluid flow rate in the primary fluid
layer. Also disclosed are methods for enhancing the insulating properties
of insulating assemblies.
Claims
1. A device comprising at least one microchannel defined by at least
one flexible seal, at least one flexible complex seal, or a combination
thereof, and at least one immobile and inflexible substrate and at
least one mobile and inflexible substrate.
2. The device of claim 1, wherein the mobile and inflexible substrate
is capable of movement in the normal direction due to expansion
or contraction of the flexible seal or flexible complex seal.
3. The device of claim 2, wherein a change in the volumetric space
of the microchannel occurs upon movement of the mobile and inflexible
substrate.
4. The device of claim 1, wherein the flexible seal or the flexible
complex seal separates the immobile and inflexible substrate and
the mobile and inflexible substrate by a distance.
5. The device of claim 1, wherein the mobile and inflexible substrate
has a thermal conductivity that is about equal to or greater than
the thermal conductivity of copper.
6. The device of claim 1, wherein the flexible seal has an elastic
modulus lower than about 10.sup.7 N/m.sup.2.
7. The device of claim 1, wherein the flexible seal connects the
immobile and inflexible substrate and the mobile and flexible substrate.
8. The device of claim 1, wherein one of the substrates is heated.
9. The device of claim 1, and further comprising at least one heated
substrate.
10. The device of claim 1, wherein the substrates separate a plurality
of fluid layers.
11. The device of claim 10, wherein the direction of the fluid
flow of the fluid layers is the same or different.
12. The device of claim 10, wherein the rate of the fluid flow
of the fluid layers is the same or different.
13. The device of claim 4, wherein the distance between the substrates
increases when the average pressure between the substrates increases.
14. The device of claim 3, wherein the volumetric space of the
microchannel comprises a coolant and a super dispersive media.
15. The device of claim 14, wherein the super dispersive media
comprises at least one metallic nanoparticle, at least one carbon
nanoparticle, at least one nanotube, at least one flexible nanostring,
or a combination thereof.
16. The device of claim 14, wherein the distribution of the super
dispersive media is not uniform.
17. The device of claim 16, wherein the distribution is minimum
in the regions of the volumetric space of the microchannel having
least transverse convection heat transfer.
18. The device of claim 16, wherein the distribution is maximum
in the regions of the volumetric space of the microchannel having
maximum transverse convection heat transfer.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation-in-part of U.S. patent
application Ser. No. 10/840,303, filed 7 May 2004, pending, which
claims the benefit of U.S. Provisional Patent Application No. 60/470,850
filed 16 May 2003, which names Kambiz Vafai and Abdul Rahim A. Khaled
as inventors, which are herein incorporated by reference in their
entirety.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention generally relates to thin film channels,
microfluidic devices, biosensors, electronic cooling, control of
fuel flow prior combustion and insulating assemblies.
[0004] 2. Description of the Related Art
[0005] Thin films are used in a variety of devices, including electrical,
electronic, chemical, and biological devices, for modulating or
controlling flow and heat characteristics in the devices. See e.g.
Vafai & Wang (1992) Int. J. Heat Mass Transfer 35:2087-2099,
Vafai et al. (1995) ASME J Heat Transfer 117:209-218, Zhu &
Vafai (1997) Int. J. Heat Mass Transfer 40:2887-2900, and Moon et
al. (2000) Int. J. Microcircuits and Electronic Packaging 23:488-493
for flat heat pipes; Fedorov & Viskanta (2000) Int. J. Heat
Mass Transfer 43:399-415, Lee and Vafai (1999) Int. J. Heat Mass
Transfer 42:1555-1568, and Vafai & Zhu (1999) Int. J. Heat Mass
Transfer 42; 2287-2297 for microchannel heat sinks; Lavrik et al.
(2001) Biomedical Microdevices 3(1):35-44, and Xuan & Roetzel
(2000) Int. J. Heat Mass Transfer 43:3701-3707 for biosensors and
nanodevices.
[0006] For many of these applications, modulation and control of
the flow and heat characteristics in the devices is desired. Unfortunately,
the prior art methods for modulating and controlling the flow and
heat are difficult or problematic. For example, a two phase flow
in a microchannel is capable of removing maximum heat fluxes generated
by electronic packages, but instability occurs near certain operating
conditions. See Bowers & Mudwar (1994) ASME J. Electronic Packaging
116:290-305. Further, the use of porous medium for cooling electronic
devices enhances heat transfer via the increase in the effective
surface area, but the porous medium results in a substantial increase
in the pressure drop inside the thin film. See Huang & Vafai
(1993) Int. J. Heat Mass Transfer 36:4019-4032, Huang & Vafai
(1994) AIAA J. Thermophysics and Heat Transfer 8:563-573, Huang
& Vafai (1994) Int. J. Heat and Fluid Flow 15:48-61, and Hadin
(1994) ASME J. Heat Transfer 116:465-472.
[0007] Therefore, a need still exists for methods of modulating
or controlling heat and flow characteristics in thin films.
SUMMARY OF THE INVENTION
[0008] The present invention generally relates to thin film channels,
microfluidic devices, biosensors, electronic cooling, control of
fuel flow prior to combustion and insulating assemblies.
[0009] The present invention provides methods to modulate flow
and heat in a variety of thermal systems including thin film channels,
microfluidics, insulating assemblies, and the like with no need
for external cooling or flow controlling devices.
[0010] The present invention provides several devices for modulating
flow and heat. Several devices provided herein reduce the temperature
as the thermal load increases as related to electronic cooling and
cooling of engine applications. Several devices provided herein
reduce the flow rate as the thermal load increases which are important
to internal combustion applications where fuel rate needs to be
reduced as the engine gets overheated. Several devices provided
herein conserve thermal energy as the temperature increases and
to reduce leakage from microfluidics. These devices have applications
related to thermal insulations and biosensor devices among others.
[0011] It is to be understood that both the foregoing general description
and the following detailed description are exemplary and explanatory
only and are intended to provide further explanation of the invention
as claimed. The accompanying drawings are included to provide a
further understanding of the invention and are incorporated in and
constitute part of this specification, illustrate several embodiments
of the invention, and together with the description serve to explain
the principles of the invention.
DESCRIPTION OF THE DRAWINGS
[0012] This invention is further understood by reference to the
drawings wherein:
[0013] FIG. 1 shows an insulating assembly comprising the flexible
seals of the present invention.
[0014] FIG. 2 shows primary fluid layer expansion versus its temperature.
[0015] FIG. 3 shows the percentage volumetric thermal expansion
for the conditions of isobaric expansion and expansion using a linearized
model under linearly varying pressure.
[0016] FIG. 4 shows dimesionless change in the equivalent resistance
of the fluid layers for two different fluids.
[0017] FIG. 5 shows enhanced insulating properties using xenon
and an insulating assembly using the flexible seals according to
the present invention.
[0018] FIG. 6 shows deteriorated insulating properties using helium
and an insulating assembly using the flexible seals according to
the present invention.
[0019] FIG. 7 shows reduction of thermal losses at large operating
temperatures using xenon and an insulating assembly using the flexible
seals according to the present invention.
[0020] FIG. 8 shows deterioration of thermal losses at large operating
temperatures using helium and an insulating assembly using the flexible
seals according to the present invention.
[0021] FIG. 9 shows advanced assemblies with enhanced insulating
properties comprising the flexible seals according to the present
invention.
[0022] FIG. 10 shows the schematic diagram for a thin film and
the coordinate system.
[0023] FIG. 11 shows the effects of the fixation parameter on the
thin film thickness.
[0024] FIG. 12 shows the effects of the fixation parameter on the
fluctation at the upper substrate.
[0025] FIG. 13 shows the effects of the frequency of internal pressure
pulsations on the fluctation at the upper substrate.
[0026] FIG. 14 shows the effects of the squeezing number on the
thin film thickness.
[0027] FIG. 15 shows the effects of the squeezing number on the
fluctation at the upper substrate.
[0028] FIG. 16 shows the effects of the phase shift of the internal
pressure on the thin film thickness.
[0029] FIG. 17 shows the effects of the thermal squeezing paremeter
and the fixation parameter on the mean bulk temperature.
[0030] FIG. 18 shows the effects of the thermal squeezing paremeter
and the fixation parameter on the average lower substrate temperature.
[0031] FIG. 19 shows the effects of the fixation parameter on the
Nusselt number for constant wall temperature conditions.
[0032] FIG. 20 shows the effects of the fixation parameter on the
Nusselt number for uniform wall heat flux conditions.
[0033] FIG. 21 shows the axial development of the Nusselt number
vesrus the fixation parameter.
[0034] FIG. 22 shows the effects of the frequency of pulsations
on the average heat transfer.
[0035] FIG. 23 shows the effects of the frequency of pulsations
on the average lower substrate temperature.
[0036] FIG. 24 shows the effects frequency of pulsations on the
fluctuation in the average heat transfer and the average lower substrate
temperature.
[0037] FIG. 25A is a 3D view of a schematic diagram for a two-layered
thin film supported by flexible seals and flexible complex seals
of the present invention.
[0038] FIG. 25B shows the front and side views including the main
boundary conditions of the schematic diagram for a two-layered thin
film supported by flexible seals and flexible complex seals of the
present invention.
[0039] FIG. 26A shows the effects of E* on .PSI..sub.X=0.5 and
dH.sub.1/d.tau.*(H.sub.t=2.0, E.sub.1*=E.sub.2*=E*, F.sub.T=0.15,
P.sub.S1=P.sub.S2=1.0, .beta..sub.p=0.3, .beta..sub.q=0.2, .phi..sub.p=.pi./2,
.gamma.=3.0, .gamma..sub.p=6.0, .lamda..sub.1=.lamda..sub.2=0, .sigma..sub.1=3.0,
.sigma..sub.2=6.0).
[0040] FIG. 26B shows the effects of E* on .THETA..sub.AVG and
(.theta..sub.u).sub.AVG (H.sub.t=2.0, E.sub.1*=E.sub.2*=E*, F.sub.T=0.15,
P.sub.S1=P.sub.S2=1.0, .beta..sub.p=0.3, .beta..sub.q=0.2, .phi..sub.p=.pi./2,
.gamma.=3.0, .gamma..sub.p=6.0, .lamda..sub.1=.lamda..sub.2=0, .sigma..sub.1=3.0,
.sigma..sub.2=6.0).
[0041] FIG. 27A shows the effects of F.sub.T on .PSI..sub.X=0.5
and dH.sub.1/d.tau.* (H.sub.1=2.0, E.sub.1*=0.3, E.sub.2*=0.003,
P.sub.S1=1.0, P.sub.S2=0.012, .beta..sub.p=0.3, .beta..sub.q=0.2,
.phi..sub.p=.pi./2, .gamma.=3.0, .gamma..sub.p=6.0, .lamda..sub.1=.lamda..sub.2=0,
.sigma..sub.1=6.0, .sigma..sub.2=1.0).
[0042] FIG. 27B shows the effects of F.sub.T on .THETA..sub.AVG
and (.theta..sub.u).sub.AVG (H.sub.t=2.0, E.sub.1*=0.3, E.sub.2*=0.003,
P.sub.S1=1.0, P.sub.S2=0.012, .beta..sub.p=0.3, .beta..sub.q=0.2,
.phi..sub.p=.pi./2, .gamma.=3.0, .gamma..sub.p=6.0, .lamda..sub.1=.lamda..sub.2=0,
.sigma..sub.1=6.0, .sigma..sub.2=1.0).
[0043] FIG. 28 shows the effects of F.sub.T on Nusselt numbers
for primary and secondary flows: (primary flow maintained at a CIF
condition, H.sub.t=2.0, E.sub.1*=E.sub.2*=E*=0.2, P.sub.S1=P.sub.S2=1.0,
.beta..sub.p=0.3, .beta..sub.q=0.2, .phi..sub.p=.pi./2, .gamma.=3.0,
.gamma..sub.p=6.0, .lamda..sub.1=.lamda..sub.2=0, .sigma..sub.1=3.0,
.sigma..sub.2=6.0).
[0044] FIG. 29A shows the effects of .sigma..sub.1 on .PSI..sub.X=0.5
and dH.sub.1/d.tau.* (H.sub.t=2.0, E.sub.1*=E.sub.2*=E*=0.2, F.sub.T=0.15,
P.sub.S1=P.sub.S2=1.0, .beta..sub.p=0.3, .beta..sub.q=0.2, .phi..sub.p=.pi./2,
.gamma.=3.0, .gamma..sub.p=6.0, .lamda..sub.1=.lamda..sub.2=0, .sigma..sub.2=6.0).
[0045] FIG. 29B shows the effects of .sigma..sub.1 on .THETA..sub.AVG
and (.theta..sub.u).sub.AVG (H.sub.t=2.0, E.sub.1*=E.sub.2*=E*=0.2,
F.sub.T=0.15, P.sub.S1=P.sub.S2=1.0, .beta..sub.p=0.3, .beta..sub.q=0.2,
.phi..sub.p=.pi./2, .gamma.=3.0, .gamma..sub.p=6.0, .lamda..sub.1=.lamda..sub.2=0,
.sigma..sub.2=6.0).
[0046] FIG. 30A shows the effects of P.sub.S2 on .PSI..sub.X=0.5
and dH.sub.1/d.tau.* (H.sub.t=2.0, E.sub.1*=E.sub.2*=E*=0.2, F.sub.T=0.15,
P.sub.S1=1.0, .beta..sub.p=0.3, .beta..sub.q=0.2, .phi..sub.p=.pi./2,
.gamma.=3.0, .gamma..sub.p=6.0, .lamda..sub.1=.lamda..sub.2=0, .sigma..sub.1=5.0,
.sigma..sub.2=6.0).
[0047] FIG. 30B shows the effects of P.sub.S2 on .THETA..sub.AVG
and (.theta..sub.u).sub.AVG (H.sub.t=2.0, E.sub.1*=E.sub.2*=E*=0.2,
F.sub.T=0.15, P.sub.S1=1.0, .beta..sub.p=0.3, .beta..sub.q=0.2,
.phi..sub.p=.pi./2, .gamma.=3.0, .gamma..sub.p=6.0, .lamda..sub.1=.lamda..sub.2=0,
.sigma..sub.1=5.0, .sigma..sub.2=6.0).
[0048] FIG. 31 shows the effects of P.sub.S2 on Nusselt numbers
for primary and secondary flows: (primary flow maintained at a CIF
condition, H.sub.t=2.0, E.sub.1*=E.sub.2*=E*=0.2, F.sub.T=0.15,
P.sub.S1=1.0, .beta..sub.p=0.3, .beta..sub.q=0.2, .phi..sub.p=.pi./2,
.gamma.=3.0, .gamma..sub.p=6.0, .lamda..sub.1=.lamda..sub.2=0, .sigma..sub.1=5.0,
.sigma..sub.2=6.0).
[0049] FIG. 32A shows the effects of .lamda..sub.2 on .PSI..sub.X=0.5
and dH.sub.1/d.tau.* (primary flow maintained at a CIP condition,
H.sub.t=2.0, E.sub.1*=E.sub.2*=E*=0.2, F.sub.T=0.15, P.sub.S1=P.sub.S2=1.0,
.beta..sub.p=0.3, .beta..sub.q=0.2, .phi..sub.p=.pi./2, .gamma.=3.0,
.gamma..sub.p=6.0, .lamda..sub.1=0, .sigma..sub.1=3.0, .sigma..sub.22=6.0).
[0050] FIG. 32B shows the effects of .lamda..sub.2 on .THETA..sub.AVG
and (.theta..sub.u).sub.AVG (primary flow maintained at a CIP condition,
H.sub.t=2.0, E.sub.1*=E.sub.2*=E*=0.2, F.sub.T=0.15, P.sub.S1=P.sub.S2=1.0,
.beta..sub.p=0.3, .beta..sub.q=0.2, .phi..sub.p=.pi./2, .gamma.=3.0,
.gamma..sub.p=6.0, .lamda..sub.1=0, .sigma..sub.1=3.0, .sigma..sub.2=6.0).
[0051] FIG. 33A shows the effects of .lamda..sub.2 on .PSI..sub.X=0.5
and dH.sub.1/d.tau.* (primary flow maintained at a CIF condition,
H.sub.t=2.0, E.sub.1*=E.sub.2*=E*=0.2, F.sub.T=0.15, P.sub.S1=P.sub.S2=1.0,
.beta..sub.p=0.3, .beta..sub.q=0.2, .phi..sub.p=.pi./2, .gamma.=3.0,
.gamma..sub.p=6.0, .lamda..sub.1=0, .sigma..sub.1=3.0, .sigma..sub.2=6.0).
[0052] FIG. 33B shows the effects of .lamda..sub.2 on .THETA..sub.AVG
and (.theta..sub.u).sub.AVG (primary flow maintained at a CIF condition,
H.sub.t=2.0, E.sub.1*=E.sub.2*=E*=0.2, F.sub.T=0.15, P.sub.S1=P.sub.S2=1.0,
.beta..sub.p=0.3, .beta..sub.q=0.2, .phi..sub.p=.pi./2, .gamma.=3.0,
.gamma..sub.p=6.0, .lamda..sub.1=0, .sigma..sub.1=3.0, .sigma..sub.2=6.0).
[0053] FIG. 34 shows the effects of .gamma..sub.p on .DELTA..PSI..sub.X=0.5
and .DELTA.(.theta..sub.u).sub.AVG for the CIP condition (H.sub.t=2.0,
E.sub.1*=E.sub.2*=E*=0.3, F.sub.T=0.3, P.sub.S1=P.sub.S2=1.0, .beta..sub.p=0.3,
.beta..sub.q=0.2, .phi..sub.p=.pi./2, .gamma.=3.0, .lamda..sub.1=.lamda..sub.2=0,
.sigma..sub.1=3.0, .sigma..sub.2=6.0).
[0054] FIG. 35 shows the effects of H.sub.t on .PSI..sub.X=0.5
and dH.sub.1/d.tau.* (primary flow maintained at a CIP condition,
E.sub.1*=E.sub.2*=E*=0.2, F.sub.T=0.15, P.sub.S1=P.sub.S2=1.0, .beta..sub.p=0.3,
.beta..sub.q=0.2, .phi..sub.p=.pi./2, .gamma.=3.0, .gamma..sub.p=6.0,
.lamda..sub.1=.lamda..sub.2=0, .sigma..sub.1=3.0, .sigma..sub.2=6.0).
[0055] FIG. 36A is a front view of a schematic diagram for a thin
film with flexible complex seal according to the present invention
and the corresponding coordinate system.
[0056] FIG. 36B is a side view of a schematic diagram for a thin
film with flexible complex seal according to the present invention
and the corresponding coordinate system.
[0057] FIG. 36C is a 3D diagram of a schematic diagram for a thin
film with flexible complex seal according to the present invention
and the corresponding coordinate system.
[0058] FIG. 37A shows the effects of the dimensionless thermal
expansion parameter F.sub.T on dimensionless thin film thickness
H.
[0059] FIG. 37B shows the effects of the dimensionless thermal
expansion parameter F.sub.T on dimensionless average lower substrate
temperature (.theta..sub.W).sub.AVG.
[0060] FIG. 37C shows the effects of the dimensionless thermal
expansion parameter F.sub.T on dH/d.tau..
[0061] FIG. 37D shows the effects of the dimensionless thermal
expansion parameter F.sub.T on exit Nusselt number Nu.sub.L
[0062] FIG. 38A shows the effects of the dimensionless thermal
dispersion parameter .lamda. on dimensionless average lower substrate
temperature (.theta..sub.W).sub.AVG.
[0063] FIG. 38B shows the effects of the dimensionless thermal
dispersion parameter .lamda. on dimensionless thickness H.
[0064] FIG. 38C shows the effects of the dimensionless thermal
dispersion parameter .lamda. on temperature profile.
[0065] FIG. 38D shows the effects of the dimensionless thermal
dispersion parameter .lamda. on exit Nusselt number Nu.sub.L
[0066] FIG. 39 shows effects of the dimensionless dispersion parameter
.lamda. on the time variation of the dimensionless thin film thickness
dH/d.tau..
[0067] FIG. 40A shows effects of the thermal squeezing parameter
P.sub.S and the squeezing number .sigma. on dimensionless average
lower substrate temperature (.theta..sub.W).sub.AVG.
[0068] FIG. 40B shows effects of the thermal squeezing parameter
P.sub.S and the squeezing number .sigma. on dimensionless thin film
thickness H.
[0069] FIG. 40C shows effects of the thermal squeezing parameter
P.sub.S and the squeezing number .sigma. on dH/d.tau..
[0070] FIG. 41A shows effects of the fixation parameter F.sub.n
and the dimensionless thermal load amplitude .beta..sub.q on dimensionless
average lower substrate temperature (.theta..sub.W).sub.AVG.
[0071] FIG. 41B shows effects of the fixation parameter F.sub.n
and the dimensionless thermal load amplitude .beta..sub.q on dimensionless
thin film thickness H.
[0072] FIG. 42 shows effects of the dimensionless thermal expansion
parameter F.sub.T on the average dimensionless pressure inside the
thin film .PI..sub.AVG.
[0073] FIG. 43A is a schematic diagram of a symmetrical fluidic
cell (it has a uniform variation in the film thickness under disturbed
conditions and can be used for multi-detection purposes).
[0074] FIG. 43B is a schematic diagram of corresponding coordinate
systems with leakage illustration.
[0075] FIG. 44A shows effects of the dimensionless leakage parameter
M.sub.L on the dimensionless thin film thickness H, the film thickness
decreases with an increase in the leakage.
[0076] FIG. 44B shows effects of the dimensionless leakage parameter
M.sub.L on the inlet pressure gradient.
[0077] FIG. 45 shows effects of the fixation parameter F.sub.n
on the fluctuation rate at the upper substrate dH/d.tau.. The fluctuation
rate increases as the seal becomes softer.
[0078] FIG. 46 shows effects of the squeezing number .sigma. on
the fluctuation rate at the upper substrate dH/d.tau.. The fluctuation
rate decreases as the order of the inlet velocity decreases compared
to the axial squeezed velocity due to pressure pulsations.
[0079] FIG. 47A shows the effects of the dimensionless slip parameter
.beta..sub.P/h.sub.o on the dimensionless wall slip velocity U.sub.slip.
[0080] FIG. 47B shows the effects of the dimensionless slip parameter
.beta..sub.P/h.sub.o on the dimensionless normal velocity V (the
dimensionless time .tau.*=3.pi./2 corresponds to the time at which
the fluctuation rate at the upper substrate is maximum while .tau.*=11.pi./6
corresponds to the time at which the fluctuation rate at the upper
substrate is minimum).
[0081] FIG. 48A shows the effects of the power law index n on the
dimensionless wall slip velocity U.sub.slip.
[0082] FIG. 48B shows the effects of the power law index n on the
dimensionless normal velocity V (the dimensionless time .tau.*=3.pi./2
corresponds to the time at which the fluctuation rate at the upper
substrate is maximum while .tau.*=11.pi./6 corresponds to the time
at which the fluctuation rate at the upper substrate is minimum).
[0083] FIG. 49 shows the effects of the dimensionless leakage parameter
M.sub.L on the average dimensionless lower substrate temperature
.theta..sub.W. The cooling increases with an increase in the leakage
rate.
[0084] FIG. 50 shows the effects of the fixation parameter F.sub.n
on the average dimensionless lower substrate temperature .theta..sub.W.
The cooling increases as the seal becomes softer.
[0085] FIG. 51 shows the effects of the squeezing number .sigma.
on the average dimensionless lower substrate temperature .theta..sub.W.
The cooling increases as the order of the inlet velocity increases.
[0086] FIG. 52 shows a multi-compartment fluidic cell.
[0087] FIG. 53A shows systems with increased cooling capacity as
thermal load increases utilizing a flexible complex seal according
to the present invention.
[0088] FIG. 53B shows systems with increased cooling capacity as
thermal load increases utilizing a bimaterial upper substrate.
[0089] FIG. 54A shows systems with decreased cooling capacity as
thermal load increases utilizing flexible complex seals according
to the present invention and two layered thin films.
[0090] FIG. 54B shows systems with decreased cooling capacity as
thermal load increases utilizing a bimaterial upper substrate.
[0091] FIG. 55A shows an insulating assembly arrangement for low
temperature applications.
[0092] FIG. 55A shows an insulating assembly arrangement for high
temperature applications.
[0093] FIG. 56 shows expected sample results for xenon with and
without the flexible seals of the present invention.
[0094] FIG. 57 shows a thin film supported by flexible complex
seals of the present invention with one inlet port and two exit
ports.
[0095] FIG. 59B is a schematic for an open ended cell supported
by flexible complex seals.
[0096] FIG. 60A is a front view of a schematic diagram and the
coordinate system for a single layer flexible microchannel heat
sink of the present invention.
[0097] FIG. 60B is a side view of a schematic diagram and the coordinate
system for a single layer flexible microchannel heat sink of the
present invention.
[0098] FIG. 61A is a front view of a schematic diagram and the
coordinate system for a double layered flexible microchannel heat
sink of the present invention
[0099] FIG. 61B is a side view of a schematic diagram and the coordinate
system for a double layer flexible microchannel heat sink of the
present invention.
[0100] FIG. 62 show effects of the pressure drop ( Re o = .rho.
12 .times. .times. 2 .times. .DELTA. .times. .times. p B .times.
H o 3 ) on the dimensionless exit mean bulk temperature for a single
layer flexible microchannel heat sink.
[0101] FIG. 63 shows effects of the pressure drop ( Re o = .rho.
12 .times. .times. 2 .times. .DELTA. .times. .times. p B .times.
H o 3 ) on the dimensionless average lower plate temperature for
a single layer flexible microchannel heat sink.
[0102] FIG. 64 shows effects of the pressure drop ( Re o = .rho.
12 .times. .times. 2 .times. .DELTA. .times. .times. p B .times.
H o 3 ) on the dimensionless average convective heat transfer coefficient
for a single layer flexible microchannel heat sink.
[0103] FIG. 65 shows effects of the pressure drop ( Re o = .rho.
12 .times. .times. 2 .times. .DELTA. .times. .times. p B .times.
H o 3 ) on U.sub.Reo and U.sub.F for a single layer flexible microchannel
heat sink.
[0104] FIG. 66 shows effects of the fixation parameter on the fully
developed heated plate temperature at the exit for a single layer
flexible microchannel heat sink.
[0105] FIG. 67 shows effects of Prandtl number on the dimensionless
average lower plate temperature for a single layer flexible microchannel
heat sink.
[0106] FIG. 68 shows effects of Prandtl number on the average convective
heat transfer coefficient for a single layer flexible microchannel
heat sink.
[0107] FIG. 69 shows effects of the fixation parameter on the mean
bulk temperature inside the double layered flexible microchannel
heat sink
[0108] FIG. 70 shows effects of the pressure drop ( Re o = .rho.
12 .times. .times. 2 .times. .DELTA. .times. .times. p B .times.
H o 3 ) on .kappa..sub.m and .kappa..sub.W
[0109] FIG. 71 shows effects of the pressure drop ( ( Re o ) DL
= .rho. 12 .times. .times. 2 .times. ( .DELTA. .times. .times. p
) DL B .times. H o 3 ) on the pressure drop ratio and the friction
force ratio between single and double layered flexible microchannel
heat sinks.
[0110] FIG. 72 shows effects of the delivered coolant mass flow
rate on the average heated plate temperature for both single and
double layered flexible microchannel heat sinks.
[0111] FIG. 73 is a schematic diagram and the coordinate system.
[0112] FIG. 74 shows different arrangements for the thermal dispersion
region: (a) central arrangement, and (b) boundary arrangement.
[0113] FIG. 75 shows effects of the thermal dispersion parameter
E.sub.o and the dimensionless thickness .LAMBDA. on the Nusselt
number at thermally fully developed conditions for the central arrangement
(the number of the dispersive elements is the same for each arrangement).
[0114] FIG. 76 shows effects of the thermal dispersion parameter
E.sub.o and the dimensionless thickness .LAMBDA. on the Nusselt
number at thermally fully developed conditions for the boundary
arrangement (the number of the dispersive elements is the same for
each arrangement).
[0115] FIG. 77 shows effects of the dispersion coefficient C* and
the dimensionless thickness .LAMBDA. on the Nusselt number at the
exit for central arrangement (the number of the dispersive elements
is the same for each arrangement).
[0116] FIG. 78 shows effects of the dispersion coefficient C* and
the dimensionless thickness .LAMBDA. on the average dimensionless
plate temperature .theta..sub.W for central arrangement (the number
of the dispersive elements is the same for each arrangement, Pe.sub.f=670).
[0117] FIG. 79 shows effects of the dispersion coefficient C* and
the dimensionless thickness .LAMBDA. on the average dimensionless
plate temperature .theta..sub.W for central arrangement (the number
of the dispersive elements is the same for each arrangement, Pe.sub.f=1340).
[0118] FIG. 80 shows effects of the dispersion coefficient C* and
the dimensionless thickness .LAMBDA. on the Nusselt number at the
exit for the boundary arrangement (the number of the dispersive
elements is the same for each arrangement).
[0119] FIG. 81 shows effects of the dispersion coefficient C* and
the dimensionless thickness .LAMBDA. on the average dimensionless
plate temperature .theta..sub.W for boundary arrangement (the number
of the dispersive elements is the same for each arrangement, Pe.sub.f=670).
[0120] FIG. 82 shows effects of the dispersion coefficient C* and
the dimensionless thickness .LAMBDA. on the average dimensionless
plate temperature .theta..sub.W for boundary arrangement (the number
of the dispersive elements is the same for each arrangement, Pe.sub.f=340).
[0121] FIG. 83 shows effects of D.sub.e on the volume fraction
distribution of the dispersive element (the number of the dispersive
elements is the same for each distribution).
[0122] FIG. 84 shows effects of D.sub.c on the volume fraction
distribution of the dispersive elements (the number of the dispersive
elements is the same for each distribution).
[0123] FIG. 85 shows effects of D.sub.e on the fully developed
value for the Nusselt number (exponential distribution, the number
of the dispersive elements is the same for each distribution).
[0124] FIG. 86 shows effects of D.sub.c on the fully developed
value for the Nusselt number (parabolic distribution, the number
of the dispersive elements is the same for each distribution).
[0125] FIG. 87 is a graph that shows that the excess in Nusselt
number .kappa. is always greater than one for the boundary arrangement
while it is greater than one for the exponential distribution when
the velocity is uniform.
DETAILED DESCRIPTION OF THE INVENTION
[0126] The present invention provides methods for modulating or
controlling heat and flow characteristics in a variety of devices.
In particular, the present invention provides flexible seals for
modulating or controlling heat and flow characteristics in devices
comprising thin films, such as thin film channels, microchannels,
microfluidics and the like. The present invention also provides
a method to control heat and flow inside other thermal systems,
such as insulating assemblies and fuel flow passages. As used herein,
a "flexible seal" refers to a material that can be deformed
significantly according to the load acting upon it. Examples of
these materials include elastmors, polymers, natural rubber, closed
rubber cell foams, and the like. In some embodiments, the present
invention provides flexible complex seals for modulating or controlling
heat and flow characteristics in devices comprising thin films,
such as microchannels and microfluidics. As used herein, a "flexible
complex seal" refers to a flexible seal comprising at least
one closed cavity of stagnant fluid. In preferred embodiments, the
stagnant fluid has at least one point of contact with the heated
surface of the device. In preferred embodiments, the stagnant fluid
has a large value of the volumetric thermal coefficient. As used
herein, a "fluid" refers to a continuous amorphous substance
that tends to flow and to conform to the outline of a container,
such as a liquid or a gas, and may be used in accordance with the
present invention. As used herein, "stagnant fluid" refers
to a fluid that is not circulating or flowing and in preferred embodiments
of the present invention, the stagnant fluid is surrounded by a
flexible seal of the present invention and/or the surfaces of a
device such that the average translational velocity of the fluid
is zero.
[0127] As used herein, "primary fluid" refers to the
fluid that the devices of the present invention control or modulate
its flow rate or its temperature. As used herein, "secondary
fluid" refers to an auxiliary fluid utilized in the present
invention to achieve additional control and modulation features
for the primary fluid flow rate and temperature. As provided herein,
the stagnant fluid in the complex flexible seals can have characteristics
that are the same as or different from the characteristics of the
primary fluid, the secondary fluid, or both. As used herein, "biofluid"
refers to the fluid that contains at least one species of a biological
substance that needs to be measured. As provided herein, the primary
fluid can be a biofluid.
[0128] The flexible seals and flexible complex seals of the present
invention are typically found between a first substrate and a second
substrate of a thin film or other thermal systems such as the insulating
assemblies. As used herein, "substrate" includes plates
which may be inflexible or flexible according to part 6 herein below.
In some preferred embodiments, the elastic modulus for the seals
of the present invention, the ratio of the applied stress on the
seal to the induced strain, range from about 10.sup.3N/m.sup.2 to
about 10.sup.7N/m.sup.2. The seals of the present invention may
comprise at least one closed cavity of a fluid such as air or the
like in order to minimize their effective elastic modulus. The deformation
of the flexible seals of the present invention can be guided by
special guiders to attain maximum or desired deformations. In preferred
embodiments, the flexible seals comprise different cross-sectional
geometries, such as circular cross-section, rectangular cross-section
and the like. As used herein, "thin films" include fluidic
devices that have the thickness of their fluidic layers of an order
of about a millimeter or less such as, microchannels and microfluidic
devices. Thin films comprise at least two substrates, lower and
upper substrates, and at least one fluidic layer. As used herein,
an "insulating assembly" means an assembly of at least
two insulating substrates and at least one fluid layer placed consecutively
in series.
[0129] The flexible seals and flexible complex seals of the present
invention are typically found between a first substrate and a second
substrate of a thin film or other thermal systems such as the insulating
assemblies. As used herein, "substrate" includes plates
which may be inflexible or flexible according to part 6 herein below.
In some preferred embodiments, the elastic modulus for the seals
of the present invention, the ratio of the applied stress on the
seal to the induced strain, range from about 10.sup.3N/m.sup.2 to
about 10.sup.7N/m.sup.2. The seals of the present invention may
comprise at least one closed cavity of a fluid such as air or the
like in order to minimize their effective elastic modulus. The deformation
of the flexible seals of the present invention can be guided by
special guiders to attain maximum or desired deformations. In preferred
embodiments, the flexible seals comprise different cross-sectional
geometries, such as circular cross-section, rectangular cross-section
and the like. As used herein, "thin films" include fluidic
devices that have the thickness of their fluidic layers of an order
of about a millimeter or less such as, microchannels and microfluidic
devices. Thin films comprise at least two substrates, lower and
upper substrates, and at least one fluidic layer. As used herein,
an "insulating assembly" means an assembly of at least
two insulating substrates and at least one fluid layer placed consecutively
in series.
[0130] As disclosed herein, modulating the thermal characteristics
of a device may be conducted by modifying the thin film thickness,
the thermal load, the flow rate, or a combination thereof. For example,
additional cooling can be achieved if the thin film thickness is
allowed to increase by an increase in the thermal load, pressure
gradient or both which will cause the coolant flow rate to increase.
As provided herein, the enhancement in the cooling due to the flexible
complex seals used is substantial at larger thermal loads for stagnant
liquids while this enhancement is much larger at lower temperatures
for stagnant fluids, especially ideal gases. This is because the
volumetric thermal expansion coefficient increases for liquids and
decreases for gases as the temperature increases. Moreover, the
enhancement in the cooling due to flexible seals is substantial
at larger pressure gradients for single layered thin films while
it is significant for double layered thin films at lower pressure
gradients.
[0131] Khaled and Vafai analyzed the enhancement in the heat transfer
inside thin films supported by flexible complex seals. See Khaled
& Vafai (2003) ASME J. of Heat Transfer 125:916-925, which is
herein incorporated by reference. Specifically, the applied thermal
load was considered to vary periodically with time in order to investigate
the behavior of expandable thin film systems in the presence of
a noise in the applied thermal load. As provided herein, a noticeable
enhancement in the cooling capacity can be achieved for large thermal
loads especially in cooling of high flux electronic components (q.apprxeq.700
kW/m.sup.2) since they produce elevated working temperatures. Also,
the generated squeezing effects at the mobile and inflexible substrate
can be minimized when nanofluids are employed in the coolant flow.
As used herein, "nanofluids" are mixtures of a working
fluid, such as water, and suspended ultrafine particles in the fluid
such as copper, aluminum, or the like with diameters of an order
of about the nanometer range. See Eastman et al. (2001) Applied
Physics Letters 78: 718-720, which is herein incorporated by reference.
[0132] The flexible seals, flexible complex seals, or both of the
present invention may be used in two-layered thin films in order
to regulate the flow rate of the primary fluid layer such that excessive
heating in the secondary fluid layer results in a reduction in the
primary fluid flow rate. For example, the flexible seals, flexible
complex seals, or both of the present invention may be applied in
the internal combustion industry where the fuel flow rate should
be reduced as the engine gets overheated. In this example, the primary
fluid flow is the fuel flow while the secondary fluid flow can be
either flow of combustion products, flow of engine coolant or flow
of any other auxiliary fluid. The flexible seals, flexible complex
seals, or both of the present invention may be used to modulate
or control exit thermal conditions in devices comprising two-layered
thin films. For example, the flexible seals, flexible complex seals,
or both of the present invention may be used to minimize bimaterial
effects of various biosensors, including microcantilever based biosensors,
which are sensitive to flow temperatures. See Fritz et al. (2000)
Science 288:316-318, which is herein incorporated by reference.
In this example, the primary fluid flow is flow of a biofluid while
the secondary fluid flow can be either flow of the external surrounding
fluid or flow of any auxiliary fluid.
[0133] As provided herein, thin films comprising flexible seals,
flexible complex seals, or both are modeled and designed in order
to alleviate the thermal load or modulate the flow. These systems
according to the present invention provide noticeable control of
the flow rate, reduce thermal gradients within the primary fluid
layer at relatively large external thermal loads, and minimize fluctuation
at the mobile and inflexible substrate in the presence of nanofluids.
1. Control of Insulating Properties Using Flexible Seals
[0134] As disclosed herein, the present invention provides a method
for modulating or controlling the insulating properties of a device,
an insulating assembly having insulating substrates separated by
fluid layers and flexible seals. The fluid layers were supported
by flexible seals in order to allow for volumetric thermal expansion
of the primary fluid layers while the secondary fluid layers are
vented to the atmosphere such that the secondary fluid pressure
remains constant. The volumetric thermal expansion of the primary
fluid layers within the insulating assembly were determined taking
into consideration the variation in the fluid pressure due to the
elastic behavior of the supporting flexible seals. The volumetric
thermal expansion of the primary fluid layers was correlated to
the increase in the equivalent thermal resistance of the fluid layers.
The volumetric thermal expansion of the primary fluid was found
to approach its isobaric condition value as the primary fluid layer
thickness decreases. Also, the insulating properties were found
to be enhanced when the primary fluid had a minimum thermal conductivity
and when relatively high temperatures were experienced. The insulating
properties deteriorate at large temperatures when the primary fluid
has a relatively large thermal conductivity.
[0135] The following Table 1 provides the various symbols and meanings
used in this section: TABLE-US-00001 TABLE 1 A.sub.S surface area
of the intermediate insulating substrate C.sub.F volumetric thermal
expansion efficiency h.sub.c convective heat transfer coefficent
at the upper surface h.sub.o reference thickness of the primary
fluid layer K* stiffness of the supporting seal k.sub.ins thermal
conductivity of insulating substrates k.sub.1 thermal conductivity
of the primary fluid k.sub.2 thermal conductivity of the secondary
fluid m.sub.1 mass of the primary fluid p.sub.atm pressure of the
surrounding q heat flux R.sub.1 primary fluid layer fluid constant
R.sub.th thermal resistance of the fluid layers R.sub.tho orginal
thermal resistance of the fluid layers T average temperature of
the primary fluid layer T.sub.1 temperature at the lower surface
of the primary fluid layer T.sub.o orginal primary fluid temperature
T.sub.e temperature of the upper surface facing of the surroundings
.DELTA.h.sub.1 expansion of the primary fluid layer .eta..sub.R
dimensionless increase in the resistance of the fluid layers
[0136] Generally, thermal losses increase at large working temperatures.
The present invention provides a device that has desirable insulative
attributes even at high working temperatures. That is, the present
invention better conserves thermal energy especially at high temperatures
as compared to similar devices that do not comprise flexible seals.
An example of a device of the present invention is shown in FIG.
1. The device shown in FIG. 1 comprises the following from bottom
to top: (1) a heated substrate (generally due to contact with or
proximity to a heat source), (2) a first layer of fluid that has
a very low thermal conductivity such as xenon (the primary fluid
layer), (3) a thin layer of an insulating substrate, (4) a secondary
fluid layer comprising a second fluid that has a lower thermal conductivity
like air (needs to be larger than that of the first layer and is
open to the outside environment), and (5) a top insulating substrate.
The first and the second fluid layers along with the intermediate
insulating substrate are connected together by flexible seals. Both
the heated substrate and the upper insulating substrate are fixed
(immobile and inflexible substrates) while the intermediate insulating
substrate is capable of moving as it is supported by flexible complex
seals (mobile and inflexible substrate). In preferred embodiments,
the flexible seals are made of a material resistant to melting at
high temperatures. In order to avoid melting the seals at high temperatures,
ordinary homogenous flexible seals may be replaced with flexible
complex seals, a flexible seal comprising at least one closed cavity
containing a fluid, such as a gas.
1A. Operational Principle
[0137] When the operating temperature (high temperature source)
increases, the average fluid temperature of the primary fluid layer
increases. Accordingly, the volume of the primary fluid layer expands
accompanied by a shrinkage in the secondary fluid layer. As such,
an increase in the equivalent thermal resistance of the insulating
assembly can be attained as long as the thermal conductivity of
the primary fluid layer is smaller than that for the secondary fluid
layer. Preferably, the heated substrate has a relatively small thickness
and a relatively large thermal conductivity so that the thermal
expansion of the primary fluid layer is maximized.
1B. Volumetric Expansion in the Primary Fluid Layer
[0138] Forces on elastic materials, such as seals, are usually
proportional to the elongation of this material. See R. L. Norton
(1998) MACHINE DESIGN: AN INTEGRATED APPROACH Prentice-Hall, NJ,
which is herein incorporated by reference. Accordingly, a force
balance on the intermediate insulating substrate results as provided
in Equation 1 as follows: m 1 .times. R 1 .times. T A S .function.
( h o + .DELTA. .times. .times. h 1 ) - p atm = K * A S .times.
.DELTA. .times. .times. h 1 Eq . .times. 1 wherein
[0139] T is the average temperature of the primary fluid layer
[0140] K* is the stiffness of the supporting seals
[0141] A.sub.s is the surface area of the intermediate insulating
substrate.
[0142] h.sub.o is the reference thickness of the primary fluid
layer
[0143] .DELTA.h.sub.1 is the corresponding expansion in the primary
fluid layer thickness
[0144] m.sub.1 is the mass of the primary fluid
[0145] R.sub.1 is the primary fluid constant
[0146] The first term on the left hand side of Equation 1 represents
the pressure inside the primary fluid layer. The reference thickness
h.sub.o corresponds to the thickness of the primary fluid layer
when the primary fluid pressure is equal to the atmospheric pressure.
Equation 1 can be solved for .DELTA.h.sub.1 and the expansion is
found to be: .DELTA. .times. .times. h 1 h o = C 1 .function. (
C 2 C 1 2 + 1 - 1 ) .times. .times. where Eq . .times. 2 C 1 = (
p atm .times. A S ) / ( K * .times. h o ) + 1 2 .times. .times.
and Eq . .times. 3 C 2 = ( m 1 .times. R 1 .times. T ) / ( K * .times.
h o 2 ) - ( p atm .times. A S ) / ( K * .times. h o ) Eq . .times.
4
[0147] In order to maximize the expansion in the primary fluid
layer which in turn results in better insulating properties, i.e.
increased effective thermal resistance of the insulating assembly,
the parameter C.sub.2 needs to be maximized. This can be accomplished
by considering minimum values of K*h.sub.o while the following relationship
provided in Equation 5 is preferred to be satisfied: m 1 .times.
R 1 .times. T p atm .times. A S .times. h o >> 1 Eq . .times.
5
[0148] The following parameters were considered for studying the
flexible seals of the present invention: K*=48000 N/m, A.sub.S=0.0036
m.sup.2 and p.sub.atm=0.1 Mpa. The parameter m.sub.1R.sub.1 was
evaluated at the reference condition when the primary fluid pressure
was equal to the atmospheric pressure. This condition which causes
the expansion to be zero in Equation 1 was assumed to be at T=T.sub.o=283
K and h.sub.o=0.004 m. This leads to m.sub.1R.sub.1=5.088.times.10.sup.-3
J/K. Accordingly, the relation between the volumetric thermal expansion
of the primary fluid layer and its average temperature is illustrated
in FIG. 2.
[0149] Equation 2 reduces to the following linearized model for
relatively low volumetric thermal expansion levels ( .DELTA. .times.
.times. h 1 h o < 0.2 ) .times. : .DELTA. .times. .times. h 1
h o .apprxeq. 0.5 .times. C 2 C 1 + O .function. ( .DELTA. .times.
.times. h 1 2 ) = T - T o T o + K * .times. h o 2 m 1 .times. R
1 + O .function. ( .DELTA. .times. .times. h 1 2 ) Eq . .times.
6 where T.sub.o is the average temperature of the primary fluid
layer at the reference condition. The reference condition corresponds
to the condition that produces a zero net force on the seals. That
is, thermal expansion is zero when the primary fluid layer is kept
at T.sub.o. At this condition, the primary fluid layer thickness
is h.sub.o. The relative volumetric thermal expansion, .DELTA.h.sub.l/h.sub.o,
approximated by Equation 6 is similar to that for isobaric expansion
with the average primary fluid temperature being increased by the
parameter K * .times. h o 2 m 1 .times. R 1 . This parameter is
denoted as .DELTA.T.sub.o.
[0150] The error associated with Equation 6 is further reduced
if m 1 .times. R 1 .times. T o K * .times. h o 2 > 1. The latter
inequality means that the insulating system exhibits relatively
large volumetric thermal expansion by having a small increase in
the primary fluid pressure due to the elastic behavior of the flexible
seal. FIG. 3 illustrates the difference between the relative volumetric
expansion expressed by Equation 6 and that obtained when the expansion
is at a constant pressure. FIG. 3 shows that isobaric conditions
provide favorable volumetric thermal expansion when compared to
volumetric thermal expansion under linearly varying pressure as
when flexible seals are present.
[0151] The efficiency of the volumetric thermal expansion C.sub.F
of the primary fluid layer is defined as the ratio of the expansion
in the primary fluid layer when the flexible seal is present to
the expansion when under constant pressure as expressed in the following
Equation 7: C F = .DELTA. .times. .times. h 1 ( .DELTA. .times.
.times. h 1 ) Isobaric Eq . .times. 7 where (.DELTA.h.sub.1).sub.1sobaric/h.sub.o=(T-T.sub.o)/T.sub.o.
For the linearized model shown in Equation 6, the efficiency C.sub.F
will be: C F .apprxeq. T o T o + .DELTA. .times. .times. T o Eq
. .times. 8
[0152] According to Equation 8, the values of C.sub.F which approaches
unity as .DELTA.T.sub.o decreases are provided for various .DELTA.T.sub.o
in Table 2 as follows: TABLE-US-00002 TABLE 2 Volumetric thermal
expansion efficiency C.sub.F of the primary fluid layer versus .DELTA.T.sub.o
.DELTA.T.sub.o (K) C.sub.F (T.sub.o = 283 K) 10 0.966 50 0.850 100
0.739 150.88 0.652
1C. Equivalent Thermal Resistance of Fluid Layers
[0153] The equivalent thermal resistance of the fluid layers during
volumetric thermal expansion is given by the following Equation
9: R th = h o k 1 + h o k 2 + .DELTA. .times. .times. h 1 .function.
( 1 k 1 - 1 k 2 ) Eq . .times. 9 where
[0154] k.sub.1 is the thermal conductivity of the primary fluid
[0155] k.sub.2 is the thermal conductivity of the secondary fluid.
[0156] Both fluid layers are assumed to have a similar thickness
prior to thermal expansion equal to h.sub.o. Based on Equation 1
and Equation 3, the increase in the equivalent thermal resistance
.DELTA.R.sub.th, the third part on the right of Equation 9, was
correlated to the relative expansion in the primary fluid layer
according to the following Equation 10: .eta. R .ident. .DELTA.
.times. .times. R th R tho = .DELTA. .times. .times. h 1 h o .times.
( k 2 - k 1 ) ( k 1 + k 2 ) Eq . .times. 10 where R.sub.tho is the
equivalent thermal resistance of both layers prior to thermal expansion.
[0157] The parameter R.sub.tho is the sum of the first two terms
on the right of Equation 9. When the parameter .eta..sub.R is positive,
the thermal resistance of the insulating assembly increases while
it decreases as it becomes negative. Therefore, R.sub.tho represents
the dimensionless increase in the thermal resistance. Various properties
of different gases are provided in the following Table 3: TABLE-US-00003
TABLE 3 Various Properties of Proposed Different Gases at T = 373
K and p = 1 atm Primary fluid k (W/mK) .rho.(kg/m.sup.3) R(J/kg
K) (k.sub.air - k)/(k.sub.air + k) Xenon 0.0068 4.3 64.05 0.609
Krypton 0.011 2.75 99.78 0.4359 Helium 0.181 0.13 2077 -0.732 Neon
0.0556 0.66 412.1 -0.33 Argon 0.0212 1.3 209 0.138 Air 0.028 1.2
287 0
[0158] According to Table 3, xenon can be used to enhance the insulating
properties while helium is preferable to deteriorate the insulating
properties especially at large operating temperatures as can be
noticed from the last column in Table 3.
[0159] FIG. 4 shows the dimensionless increase in the fluid layers
equivalent thermal resistance when the primary fluid layer is charged
with xenon or helium while the secondary fluid layer is open to
the atmosphere. Charging the primary fluid layer with xenon can
provide about a 20 percent increase in the effective thermal resistance
of the fluid layers with an increase of the primary fluid layer
temperature by about 165 K. However, helium can produce a deterioration
in the insulating properties by about 25 percent with about a 165
K increase in the primary fluid layer temperature.
1D. Heat Transfer Analysis
[0160] In the following analysis, the temperature at the lower
side of the primary fluid layer was assumed to be kept under T.sub.1.
See FIG. 1. The insulating substrates were assumed to have equal
thicknesses and thermal conductivities which were equal to the reference
thickness for the primary fluid layer h.sub.o and k.sub.ins, respectively.
Accordingly, the thermal energy balance on the insulating assembly
shown in FIG. 1 reveals the following relation for the temperature
at the surface of the lower temperature side T.sub.e and the heat
transfer q, respectively: T e = ( T 1 - T .infin. ) / h c ( 1 h
c + 2 .times. h o k ins + R tho .function. ( 1 + .DELTA. .times.
.times. R th R tho ) ) + T .infin. Eq . .times. 11 q = ( T 1 - T
.infin. ) ( 1 h c + 2 .times. h o k ins + R tho .function. ( 1 +
.DELTA. .times. .times. R th R tho ) ) Eq . .times. 12 where
[0161] h.sub.c is the convective heat transfer coefficient at the
lower temperature side
[0162] T.sub..infin. is the temperature of environment facing the
lower temperature side
[0163] The surface area of the insulating assembly that faces the
seal is relatively small. Therefore, the heat transfer through the
seal portion is neglected in Equation 11 and Equation 12. For the
previous example along with h.sub.c=5 W/m.sup.2K, T.sub..infin.=275
K and k.sub.ins=0.04 W/mK, the temperature T.sub.e as a function
of T.sub.1 is illustrated in FIG. 5 and FIG. 6, respectively. These
figures also compare the temperature T.sub.e for the case when the
thermal expansion is encountered due to the presence of flexible
seals with the case where thermal expansion is not present (both
fluid layer thicknesses are equal to h.sub.o for all values of T.sub.1).
FIG. 5 shows that insulating properties are enhanced when xenon
and flexible seals are used and that T.sub.e for this case is departing
away down from the values corresponding to the case where the thermal
expansion is not present. Also, this figure shows that the departure
rates compared to the case where the thermal expansion is not present,
increase as the temperature levels increase.
[0164] FIG. 6 shows that insulating properties are deteriorated
when helium and flexible seals are used. As shown in FIG. 6 the
departure of T.sub.e for this case from the results corresponding
to the case with no thermal expansion is in the direction of an
increase in T.sub.e. Thus, insulating properties are deteriorated
at larger rates when helium and flexible seals are used especially
at large operating temperatures. The thermal expansion of the primary
fluid layer was computed at its average temperature. As such, an
iterative procedure was implemented in generating FIG. 5 and FIG.
6 so that the obtained temperatures produce the employed thermal
expansion of the primary fluid layer. Also, the volumetric thermal
expansion that were used to develop FIG. 5 and FIG. 6 were evaluated
from Equation 2.
[0165] FIG. 7 shows a comparison of heat flux of the insulating
assembly with xenon as the primary fluid under the following two
conditions: (1) in the presence of flexible seals, and (2) when
thermal expansion is not present and the thickness of the fluid
layers is h at all working temperatures. FIG. 7 shows a reduction
in the heat flux when flexible seals are introduced. FIG. 7 also
shows that the reduction rate in the heat flux increases as the
working temperatures increase indicating better insulating characteristics
are achieved when flexible seals are used to support the primary
fluid layer while the secondary fluid layer is vented. On the other
hand, an increase in the heat flux is attained when flexible seals
are used to support a fluid layer comprising a fluid with relatively
large thermal conductivity, such as helium, as shown in FIG. 8.
1E. Simplified Correlation
[0166] For the insulating assembly shown in FIG. 1, heat transfer
can be expressed by the following Equation 13a: q = ( T 1 - T e
) ( i = 1 2 .times. ( h ins ) i ( k ins ) i + ( h o .times. .times.
1 k 1 + h o .times. .times. 2 k 2 ) ( 1 + ( k 2 - k 1 ) ( k 2 +
h o .times. .times. 2 .times. k 1 / h o .times. .times. 1 ) .times.
( .DELTA. .times. .times. h 1 h o .times. .times. 1 ) ) ) Eq . .times.
13 .times. a where .DELTA.h.sub.1/h.sub.o1 can be shown to be equal
to the following Equation 13b: .DELTA. .times. .times. h 1 h o .times.
.times. 1 = ( T o + .DELTA. .times. .times. T o 2 .times. .times.
.DELTA. .times. .times. T o ) .function. [ 4 .times. ( T 1 * - T
o ) .times. .DELTA. .times. .times. T o ( T o + .DELTA. .times.
.times. T o ) 2 + 1 - 1 ] Eq . .times. 13 .times. b where
[0167] h.sub.o1 is the reference primary fluid layer thickness
[0168] h.sub.o2 is the reference secondary fluid layer thickness
[0169] (h.sub.ins).sub.i is the thickness of the i.sup.th insulating
substrate
[0170] (k.sub.ins).sub.i is the thermal conductivity of the i.sup.th
insulating substrate
[0171] T.sub.o is the primary fluid layer temperature that causes
the primary fluid pressure to be equal to the atmospheric pressure
[0172] T.sub.1* represents the average primary fluid layer temperature
[0173] The parameter T.sub.1* can be measured experimentally or
determined theoretically using an iterative scheme. Equation 13a
is based on the assumption that the heat transfer through the flexible
seals is negligible when compared to the total heat transferred
through the insulating assembly.
[0174] The solution of Equation 13a and Equation 13b can be used
to produce pertinent engineering correlations. For example, percentage
difference between the heat flux including thermal expansion effects
and the heat flux at reference condition, q.sub.ref, where thermal
expansion is ignored, and correlated to T.sub.1, T.sub.e, T.sub.o,
k.sub.1 and .DELTA.T.sub.o. The obtained family of correlations
has the following functional form: ( q ref - q ) q ref 100 .times.
% = [ a - b .function. ( T o ) - c .function. ( .DELTA. .times.
.times. T o ) - d .function. ( k 1 ) + e .function. ( T e .times.
T o .times. .DELTA. .times. .times. T o .times. k 1 ) ] .times.
( T 1 - T o ) m .times. ( T e 270 ) n Eq . .times. 14
[0175] where a, b, c, d, e, m, n and the correlation coefficient
R.sup.2 for different values of h.sub.o1 are listed in Table 4 as
follows: TABLE-US-00004 TABLE 4 Coefficients of Equation 14 for
different h.sub.o1 h.sub.o1 (m) Coefficients R.sup.2 0.004 a = 0.559,
b = 1.08 .times. 10.sup.-3, c = 5.14 .times. 10.sup.-4, 0.980 d
= 11.572, e = 2.74 .times. 10.sup.-7, m = 0.850, n = 0.1.789 0.006
a = 0.591, b = 1.17 .times. 10.sup.-3, c = 5.26 .times. 10.sup.-4,
0.983 d = 11.399, e = 2.71 .times. 10.sup.-7, m = 0..847, n = 1.880
0.008 a = 0.610, b = 1.23 .times. 10.sup.-3, c = 5.32 .times. 10.sup.-4,
0.984 d = 11.295, e = 2.69 .times. 10.sup.-7, m = 0.845, n = 1.934
This correlation was obtained over the following range of parameter
variations:
[0176] 310<T.sub.1<400 K, 270<T.sub.o<290 K, 50<.DELTA.T.sub.o<150
K, 270<T.sub.e<300 K, 0.001<k.sub.1<0.017 W/m K , h
o .times. .times. 2 = h 0 .times. .times. 1 , i = 1 2 .times. (
h ins ) i ( k ins ) i = 0.2 .times. .times. m 2 .times. K / W ,
and .times. .times. k 2 = 0.028 .times. .times. W / m .times. .times.
K . 1F. Examples of Insulating Assemblies with Maximum Enhanced
Insulating Properties
[0177] FIG. 9 shows a more advanced insulating assembly comprising
an array of primary and secondary fluid layers supported by flexible
seals. The secondary fluid layers are vented to the external atmosphere
in order to provide maximum volumetric thermal expansion of primary
fluid layers. Accordingly, the insulating properties are enhanced
for the assembly provided that the primary fluid possesses relatively
lower thermal conductivity than the secondary fluid which is the
air. The insulating assembly of FIG. 9A shows the frame of the insulating
assembly supported by a flexible seal, thereby allowing for additional
volumetric thermal expansion for the primary fluids, thereby resulting
in further enhancements of insulating properties, an increase in
the effective thermal resistance of the assembly. In an alternative
embodiment, soft elastic balloons having minimized stiffness and
containing fluids with minimized thermal conductivities within the
secondary fluid layer may be used and placed in a vented layer as
shown in FIG. 9B and FIG. 9C. In this arrangement the primary fluid
layer is eliminated and is suitable for lower heat flux applications.
The degree of enhancements in the insulating properties of the insulating
assemblies of the present invention are governed by the temperature
levels that the flexible seals can sustain before melting. Thus,
flexible seals having high melting points are preferably used for
insulating assemblies for high temperature applications. The compositions
and thus the melting points of the flexible seals of the present
invention suitable for desired temperature conditions may be readily
selected by one skilled in the art using known methods.
2. Flow and Heat Transfer Inside Thin Films Supported by Flexible
Seals in the Presence of Internal and External Pressure Pulsations
[0178] As provided herein, the effects of both external squeezing
and internal pressure pulsations were studied on flow and heat transfer
inside non-isothermal and incompressible thin films supported by
flexible seals. The laminar governing equations were non-dimensionalized
and reduced to simpler forms. The upper substrate (mobile and inflexible
substrate) displacement was related to the internal pressure through
the elastic behavior of the supporting seals. The following parameters:
squeezing number, squeezing frequency, frequency of pulsations,
fixation number (for the seal) and the thermal squeezing parameter
are the main controlling parameters. Accordingly, their influences
on flow and heat transfer inside disturbed thin films were determined
and analyzed. As provided herein, an increase in the fixation number
results in more cooling and a decrease in the average temperature
values of the primary fluid layer. Also, an increase in the squeezing
number decreases the turbulence level at the upper substrate. Furthermore,
fluctuations in the heat transfer and the fluid temperatures may
be maximized at relatively lower frequency of internal pressure
pulsations.
[0179] The following Table 5 provides the various symbols and meanings
used in this section: TABLE-US-00005 TABLE 5 B Thin film length
c.sub.p specific heat of the fluid d.sub.s effective diameter of
the seal E modulus of elasticity for the seal's material F.sub.n
fixation number H, h, h.sub.o dimensionless, dimensional and reference
thin film thickness h.sub.c convective heat transfer coefficient
k thermal conductivity of the fluid Nu.sub.L, Nu.sub.U lower and
upper substrates Nusselt numbers P.sub.S thermal squeezing parameter
p fluid pressure q reference heat flux at the lower substrate for
UHF T, T.sub.1 temperature in fluid and the inlet temperature T.sub.2
temperature at the lower and the upper substrates for CWT t time
V.sub.o reference axial velocity U, u dimensionless and dimensional
axial velocities V, v dimensionless and dimensional normal velocities
X, x dimensionless and dimensional axial coordinates Y, y dimensionless
and dimensional normal coordinates .alpha. thermal diffusivity for
the fluid .beta., .beta..sub.p dimensionless squeezing motion and
pressure pulsation amplitudes .epsilon. perturbation parameter .gamma.,
.gamma..sub.p dimensionless squeezing motion and pressure pulsation
frequencies .mu. dynamic viscosity of the fluid .theta., .theta..sub.m
dimensionless temperature and dimensionless mean bulk temperature
.theta..sub.W dimensionless temperature at the lower substrate (UHF)
.rho. density of the fluid .tau. dimensionless time .sigma. squeezing
number .omega. reciprocal of a reference time (reference squeezing
frequency) .eta. variable transformation for the dimensionless Y-coordinate
.THETA. dimensionless heat transfer parameter (CWT) .PI. dimensionless
pressure .PI..sub.i, .PI..sub.o dimensionless inlet pressure and
dimensionless mean pressure
[0180] In certain thin film applications, external disturbances,
such as unbalances in rotating machines or pulsations in external
ambient pressures due to many disturbances, can result in an oscillatory
motion at the upper substrate boundary. In addition to external
disturbances, internal pressure pulsations such as irregularities
in the pumping process, can produce similar oscillatory motion.
Even small disturbances on the substrates of the thin film can have
a substantial impact on the cooling process as the thickness of
thin films is very small. These disturbances are even more pronounced
if the thin film is supported by flexible seals. Accordingly, the
dynamics and thermal characterization of thin films will be altered.
[0181] The chambers for chemical and biological detection systems
such as fluidic cells for chemical or biological microcantilever
probes are examples of thin films. See Lavrik et al. (2001) Biomedical
Devices 3(12):35-44, which is herein incorporated by reference.
[0182] Small turbulence levels that can be introduced into these
cells by either flow pulsating at the inlet or external noise that
may be present at the boundaries which result in a vibrating boundary
can produce flow instabilities inside the fluidic cells. These disturbances
substantially effect the measurements of biological probes, such
as microcantilevers which are very sensitive to flow conditions.
[0183] The flow inside squeezed thin films, such as the flow inside
isothermal oscillatory squeezed films with fluid density varying
according to the pressure, has been studied. See Langlois (1962)
Quarterly of Applied Math. XX:131-150, which is herein incorporated
by reference. The heat transfer inside squeezed thin films (not
oscillatory type) has been analyzed. See Hamza (1992) J. Phys. D:
Appl. Phys. 25:1425-1431, Bhattacharyya et al. (1996) Numerical
Heat Transfer, Part A 30:519-532, and Debbaut (2001) J. Non-Newtonian
Fluid Mech. 98:15-31, which are herein incorporated by reference.
The flow and heat transfer inside incompressible oscillatory squeezed
thin films has been analyzed. See Khaled & Vafai (2002) Numerical
Heat Transfer Part A 41:451-467, which is herein incorporated by
reference. The effects of internal pressure pulsations have been
studied on flow and heat transfer inside channels. See Hemida et
al. (2002) Int. J. Heat Mass Transfer 45:1767-1780, and Joshi et
al. (1985) J. Fluid Mech. 156:291-300, which are herein incorporated
by reference.
[0184] Unfortunately, the prior art fails to account for the effects
of both internal and external pressure pulsations on flow and heat
transfer inside thin films, wherein the gap thickness will be a
function of both pulsations.
[0185] Therefore, as provided herein, the upper substrate of a
thin film was considered to be subjected to both external squeezing
effects and the internal pressure pulsations. The influence of internal
pressure pulsations on the displacement of the upper substrate was
determined by the theory of linear elasticity applied to the seal
supporting the substrates of an incompressible non-isothermal thin
film. The laminar governing equations for flow and heat transfer
were properly non-dimensionalized and reduced into simpler equations.
The resulting equations were then solved numerically to determine
the effects of external squeezing, internal pressure pulsations
and the strength of the seal on the turbulence inside the disturbed
thin films as well as on thermal characteristics of these thin films.
2A. Problem Formulation
[0186] A two dimensional thin film that has a small thickness,
h, compared to its length, B, was considered. The x-axis was taken
in the direction of the length of the thin film while y-axis was
taken along the thickness as shown in FIG. 10. The width of the
thin film, D, was assumed to be large enough such that two dimensional
flow inside the thin film can be assumed. The lower substrate of
the thin film was fixed (immobile and inflexible substrate) while
the vertical motion of the upper substrate (mobile and inflexible
substrate) was assumed to have sinusoidal behavior when the thin
film gap was not charged with the working fluid. This motion due
to only external disturbances is expressed according to the following
Equation 15: h=h.sub.o(1-.beta. cos(.gamma..omega.t)) Eq. 15 where
[0187] .gamma. is the dimensionless frequency
[0188] .beta. is the dimensionless upper substrate motion amplitude
[0189] .omega. is a reference frequency.
The fluid was assumed to be Newtonian with constant properties.
[0190] The general two-dimensional continuity, momentum and energy
equations for the laminar thin film are given as follows: .differential.
u .differential. x + .differential. v .differential. y = 0 Eq .
.times. 16 .rho. .function. ( .differential. u .differential. t
+ u .times. .differential. u .differential. x + v .times. u y )
= - .differential. p .differential. x + .mu. .function. ( .differential.
2 .times. u .differential. x 2 + .differential. 2 .times. u .differential.
y 2 ) Eq . .times. 17 .rho. .function. ( .differential. v .differential.
t + u .times. .differential. v .differential. x + v .times. .differential.
v .differential. y ) = - .differential. p .differential. y + .mu.
.function. ( .differential. 2 .times. v .differential. x 2 + .differential.
2 .times. v .differential. y 2 ) Eq . .times. 18 .rho. .times. .times.
c p .function. ( .differential. T .differential. t + u .times. .differential.
T .differential. x + v .times. .differential. T .differential. y
) = k .function. ( .differential. 2 .times. T .differential. x 2
+ .differential. 2 .times. T .differential. y 2 ) Eq . .times. 19
where
[0191] T is the fluid temperature
[0192] .rho. is the density
[0193] p is the pressure
[0194] .mu. is the dynamic viscosity
[0195] c.sub.p is the specific heat
[0196] k is the thermal conductivity of the fluid
[0197] Equations 16-19 are non-dimensionalized using the following
dimensionless variables: X = x B Eq . .times. 20 .times. a Y = y
h o Eq . .times. 20 .times. b .tau. = .omega. .times. .times. t
Eq . .times. 20 .times. c U = u ( .omega. .times. .times. B + V
o ) Eq . .times. 20 .times. d V = v h o .times. .omega. Eq . .times.
20 .times. e .PI. = p - p e .mu. .function. ( .omega. + V o B )
.times. - 2 Eq . .times. 20 .times. f where
[0198] T.sub.1 is the inlet temperature of the fluid
[0199] V.sub.o is a constant representing a reference dimensional
velocity
[0200] As provided in the above equations, .DELTA.T is equal to
T.sub.2-T.sub.1 for constant wall temperature conditions (CWT),
T.sub.2 will be the temperature of both lower and upper substrates,
and is equal to qh o k for uniform wall heat flux conditions (UHF).
The variables X, Y, .tau., U, V, .PI. and .theta. are the dimensionless
forms of x, y, t, u, v, p and T variables, respectively. The above
transformations except for dimensionless temperature have been used
in the art along with the perturbation parameter .epsilon. = h o
B . See Langlois (1962) Quarterly of Applied Math. XX: 131-150,
which is herein incorporated by reference.
[0201] Most flows inside thin films are laminar and could be creep
flows especially in lubrications and biological applications. Therefore,
the low Reynolds numbers flow model was adopted here. The application
of this model to Equations 16-19 results in the following reduced
non-dimensionalized equations: U = 1 2 .times. .differential. .PI.
.differential. X .times. ( Y ) .times. ( Y - H ) Eq . .times. 21
.differential. U .differential. X + .sigma. 12 .times. .differential.
V .differential. Y = 0 Eq . .times. 22 .differential. .differential.
X .times. ( H 3 .times. .differential. .PI. .differential. X ) =
.sigma. .times. .differential. H .differential. .tau. Eq . .times.
23 P S .function. ( .differential. .theta. .differential. .tau.
+ 12 .sigma. .times. U .times. .differential. .theta. .differential.
X + V .times. .differential. .theta. .differential. y ) = 2 .times.
.differential. 2 .times. .theta. .differential. X 2 + .differential.
2 .times. .theta. .differential. y 2 Eq . .times. 24 where
[0202] .sigma. is the squeezing number
[0203] P.sub.S is the thermal squeezing parameter
[0204] The squeezing number and the thermal squeezing parameter
are defined as: .sigma. = 12 1 + V o .omega. .times. .times. B Eq
. .times. 25 .times. a P S = .rho. .times. .times. c p .times. h
o 2 .times. .omega. k Eq . .times. 25 .times. b
[0205] The inlet dimensionless pulsating pressure is considered
to have the following relation: .PI..sub.i=.PI..sub.o(1+.alpha..sub.p
sin(.gamma..sub.p.omega.t+.phi..sub.p)) Eq. 26 where
[0206] .beta..sub.p is the dimensionless amplitude in the pressure
[0207] .PI..sub.i is the inlet dimensionless pressure
[0208] .PI..sub.o is the mean dimensionless pressure
[0209] .gamma..sub.p is the dimensionless frequency of the pressure
pulsations parameter
[0210] .phi..sub.p is a phase shift angle parameter
[0211] Due to both pulsations in internal pressure and external
disturbances, the dimensionless film thickness H, (H=h/h.sub.o),
can be represented by Equation 27 by noting the principle of superposition:
H=1-.beta. cos(.gamma..omega.t)+H.sub.p Eq. 27 where H.sub.p is
the dimensionless deformation of the seals resulting from pulsations
in the internal pressure.
[0212] The lower substrate was assumed to be fixed (immobile and
inflexible substrate) and that the upper substrate (mobile and inflexible
substrate) of the thin film is rigid such that the magnitude of
the deformation in the seals is similar to displacement of the upper
substrate (mobile and inflexible substrate). The dimensionless deformation
in the seals due to variations in the external pressure is the second
term of Equation 27 on the right. The dimensionless frequency .gamma.
is allowed to be different than .gamma..sub.p.
[0213] The dimensionless pressure gradient inside the thin film
as a result of the solution to the Reynolds Equation 23 is: .differential.
.PI. .differential. X = .sigma. H 3 .times. d H d .tau. .times.
( X - 1 2 ) - .PI. o .function. ( 1 + .beta. p .times. sin .function.
( .gamma. p .times. .tau. + .phi. p ) ) Eq . .times. 28
[0214] The reference velocity V.sub.o that was used to define the
dimensionless pressure, axial dimensionless velocity and the squeezing
number was taken to be related to the average velocity, u.sub.m,
inside the thin film at zero .beta. and .beta..sub.p and the dimensionless
thickness of the thin film that results from the application of
the corresponding inlet mean pressure, H.sub.m, through the following
relation: V o = u m H m 2 Eq . .times. 29
[0215] The previous scaled reference velocity is only a function
of the mean pressure, viscosity and the reference dimensions of
the thin film and results in the following relation between the
inlet mean dimensionless pressure to the squeezing number: .PI..sub.o=12-.sigma.
Eq. 30
[0216] Accordingly, the dimensionless pressure gradient, the dimensionless
pressure and the average dimensionless pressure .PI..sub.AVG inside
the thin film were related to the squeezing number through the following
equations: .differential. .PI. .function. ( X , .tau. ) .differential.
X = .sigma. H 3 .times. d H d .tau. .times. ( X - 1 2 ) - ( 12 -
.sigma. ) .times. ( 1 + .beta. p .times. sin .function. ( .gamma.
p .times. .tau. + .phi. p ) ) Eq . .times. 31 .PI. .function. (
X , .tau. ) = .sigma. 2 .times. H 3 .times. d H d .tau. .times.
( X 2 - X ) - ( 12 - .sigma. ) .times. ( 1 + .beta. p .times. sin
.function. ( .gamma. p .times. .tau. + .phi. p ) ) .times. ( X -
1 ) Eq . .times. 32 .PI. AVG .function. ( .tau. ) = - .sigma. 12
.times. H 3 .times. d H d .tau. + ( 12 - .sigma. ) 2 .times. ( 1
+ .beta. p .times. sin .function. ( .gamma. p .times. .tau. + .phi.
p ) ) Eq . .times. 33
[0217] The displacement of the upper substrate due internal pressure
pulsations was related to the .PI..sub.AVG through the theory of
linear elasticity by the following relation: H.sub.p=F.sub.n.PI..sub.AVG
Eq. 34 where F.sub.n is equal to F n = .mu. .function. ( V o + .omega.
.times. .times. B ) E .times. .times. 2 .times. d s Eq . .times.
35
[0218] The parameters E and d.sub.s in the previous equation are
the modulus of elasticity of the flexible seals of the present invention
and a characteristic dimension for the seal, respectively. The quantity
d.sub.s is equal to the effective diameter of the seal's cross section
times the ratio of the length of the seals divided by the thin film
width. The effective diameter for seals having square cross section
is equal to h.sub.o. The term F.sub.n will be called the fixation
number of the thin film.
[0219] The fixation parameter F.sub.n represents a ratio between
viscous shear force inside thin films to the elastic forces of the
flexible seals. Moreover, Equation 34 is based on the assumption
that transient behavior of the seal's deformation is negligible.
The values of F.sub.n are about 0.001 to about 0.1 for long thin
films supported by flexible seals.
[0220] The first set of dimensionless boundary conditions used
were for constant wall temperatures (CWT) at both the lower and
the upper substrates while the second set used assumed that the
lower substrate was at uniform wall heat flux conditions (UHF) and
the upper substrate is insulated. As such the dimensionless boundary
conditions can be written as: .theta. .function. ( X , Y , 0 ) =
0 , .theta. .function. ( 0 , Y , .tau. ) = 0 , .theta. .function.
( X , 0 , .tau. ) = 1 .times. .times. .theta. .function. ( X , H
, .tau. ) = 1 , .differential. .differential. X .times. ( 1 - .theta.
.function. ( 1 , Y , .tau. ) 1 - .theta. m .function. ( 1 , .tau.
) ) = 0 .times. .times. CWT Eq . .times. 36 .theta. .function. (
X , Y , 0 ) = 0 , .theta. .function. ( 0 , Y , .tau. ) = 0 , .differential.
.theta. .function. ( X , 0 , .tau. ) .differential. Y = - 1 .times.
.times. .differential. .theta. .function. ( X , H , .tau. ) .differential.
Y = 0 , .differential. .theta. .function. ( 1 , Y , .tau. ) .differential.
X = .sigma. 12 .times. U m .times. ( 1 P S .times. H - .differential.
.theta. .function. ( 1 , Y , .tau. ) .differential. .tau. ) .times.
.times. UH .times. .times. F Eq . .times. 37
[0221] The last condition of Equation 36 is based on the assumption
that the flow at the exit of the thin film is thermally fully developed.
Moreover, the last thermal condition of Equation 37 was derived
based on an integral energy balance at the exit of the thin film
realizing that the axial conduction is negligible at the exit. The
calculated thermal parameters considered were the Nusselt numbers
at the lower and upper substrates, and the dimensionless heat transfer
from the upper and lower substrates, .THETA., for CWT conditions,
which are defined according to the following equations: .times.
Nu U .function. ( X , .tau. ) .ident. h c .times. h o k = 1 1 -
.theta. m .function. ( X , .tau. ) .times. .differential. .theta.
.function. ( X , H , .tau. ) .differential. Y .times. .times. CWT
.times. .times. Nu L .function. ( X , .tau. ) .ident. h c .times.
h o k = - 1 1 - .theta. m .function. ( X , .tau. ) .times. .differential.
.theta. .function. ( X , 0 , .tau. ) .differential. Y .times. .times.
.times. .THETA. .function. ( X , .tau. ) = ( .differential. .theta.
.function. ( X , H , .tau. ) .differential. Y - .differential. .theta.
.function. ( X , 0 , .tau. ) .differential. Y ) Eq . .times. 38
UH .times. .times. F .times. .times. Nu 1 .function. ( X , .tau.
) .ident. h c .times. h o k = 1 .theta. .function. ( X , 0 , .tau.
) - .theta. m .function. ( X , .tau. ) Eq . .times. 39 where .theta.m
and Um are the dimensionless mean bulk temperature and the dimensionless
average velocity at a given section and are defined as follows:
.theta. m .function. ( X , .tau. ) = 1 U m .function. ( X , .tau.
) .times. H 0 .times. .intg. 0 H .times. U .function. ( X , Y ,
.tau. ) .times. .theta. .function. ( X , Y , .tau. ) .times. d Y
.times. .times. U m .function. ( X , .tau. ) = 1 H .times. .intg.
0 H .times. U .function. ( X , Y , .tau. ) .times. d Y Eqs . .times.
40 .times. a , 40 .times. b
[0222] Due to symmetric flow and thermal conditions for CWT, Nusselt
numbers at lower and upper substrates were expected to be equal.
2B. Numerical Methods
[0223] The dimensionless thickness of the thin film was determined
by solving Equations 27, 33 and 34 simultaneously. Accordingly,
the velocity field, U and V, was determined from Equations 21 and
22. The reduced energy equation, Equation 24, was then solved using
the Alternative Direction Implicit techniques (ADI) known in the
art by transferring the problem to one with constant boundaries
using the following transformations: .tau.*=.tau., .xi.=X and .eta.
= Y H . Iterative solution was employed for the .xi.-sweep of the
energy equation for CWT conditions so that both the energy equation
and the exit thermal condition, last condition of Equation 36, are
satisfied. The values of 0.008, 0.03, 0.002 were chosen for .DELTA..xi.,
.DELTA..eta. and .DELTA..tau.*. 2C. Effects of Pressure Pulsations
on the Dimensionless Film Thickness
[0224] FIG. 11 and FIG. 12 describe the importance of the fixation
number F.sub.n on the dimensionless film thickness H and the dimensionless
normal velocity at the upper substrate V(X,H,.tau.), respectively.
As F.sub.n increases, H and absolute values of V(X,H,.tau.) increase.
Soft (flexible seals) fixations have large F.sub.n values. Increases
in the viscosity and flow velocities or a decrease in the thin film
thickness, perturbation parameter and the seal's modulus of elasticity
increase the value of F.sub.n as provided by Equation 35.
[0225] The effects of pressure pulsations on H are clearly seen
for large values of F.sub.n as shown in FIG. 11 and FIG. 12. At
these values, the frequency of the local maximum or minimum of H
is similar to the frequency of the pressure pulsations as seen from
FIG. 11. Further, the degree of turbulence at the upper substrate
is increased when F.sub.n increases as shown in FIG. 12. The degree
of turbulence at the upper substrate refers to the degree of fluctuations
at the upper substrate and the number of local maximum and minimum
in V(X,H,.tau.). This is also obvious when the values of .gamma..sub.p
increase as shown in FIG. 13. The increase in turbulence level at
the upper substrate may produce back flows inside the thin film
at large values of .gamma..sub.p, which will have an effect on the
function of a thin film such as those used as chambers in detection
and sensing devices.
[0226] For .sigma.=12 where the time average of the average gage
pressure inside the thin film is zero, the variation in H decreases
as F.sub.n increases. This effect can be seen from Equation 33 and
Equation 34 and will cause reductions in the flow and in the cooling
process. However, the mean value of .PI..sub.AVG is always greater
than zero for other values of .sigma. which causes an increase in
the mean value of H as F.sub.n increases resulting in an increase
in the mean value of the flow rate inside the thin film.
[0227] FIG. 14 shows the effects of the squeezing number .sigma.
on H. Small values of .sigma. indicates that the thin film is having
relatively large inlet flow velocities and therefore large pressure
gradients and large values of .PI..sub.o. Accordingly, H increases
as .sigma. decreases as seen in FIG. 14. Further, the degree of
turbulence at the upper substrate increases as .sigma. decreases.
This is shown in FIG. 15. The changes in the pressure phase shift
results in similar changes in the dimensionless thin film thickness
phase shift as shown in FIG. 16.
2D. Effects of Pressure Pulsations on Heat Transfer Characteristics
of the Thin Film
[0228] FIG. 17 and FIG. 18 illustrate the effects of F.sub.n and
P.sub.S on the dimensionless mean bulk temperature .theta..sub.m
and the average lower substrate temperature .theta..sub.W, average
of .theta.(X,0,.tau.), for constant wall temperature CWT and uniform
heat flux UHF conditions, respectively. As F.sub.n increases when
softer flexible seals are used, the induced pressure forces inside
the thin film due to internal pressure pulsations will increase
the displacement of the upper substrate (mobile and inflexible substrate)
as shown before. This enables the thin film to receive larger flow
rates since the insulating assemblies in these figures have similar
values for the dimensionless pressure at the inlet. Thus, there
is more cooling to the substrates results as F.sub.n increases resulting
in a decrease in the .theta..sub.m and average .theta..sub.W values
and their corresponding fluctuations for CWT and UHF conditions,
respectively. The effect of the thermal squeezing parameter P.sub.S
on the cooling process is also shown in FIG. 17 and FIG. 18. The
cooling at the substrates is enhanced as P.sub.S increases.
[0229] FIG. 19 and FIG. 20 show the effects of F.sub.n on the Nusselt
number at the lower substrate Nu.sub.L for CWT and UHF conditions,
respectively. The irregularity in Nu.sub.L decrease as F.sub.n decreases
because the upper substrate will not be affected by the turbulence
in the flow if the flexible seals have relatively large modulus
of elasticity. In other words, the induced flow due to the upper
substrate motion is reduced as F.sub.n decreases resulting in less
disturbances to the flow inside the thin film. This can be seen
in FIG. 21 for UHF conditions where Nu.sub.L reaches a constant
value at low values of F.sub.n after a certain distance from the
inlet. The values of Nu.sub.L and the corresponding fluctuations
are noticed to decrease as F.sub.n increases.
[0230] FIG. 22 and FIG. 23 illustrate the effects of dimensionless
frequency of the inlet pressure pulsations .gamma..sub.p on the
average dimensionless heat transferred from the substrates .THETA.
and the average .theta..sub.W for CWT and UHF conditions, respectively.
The figures show that the mean value of .THETA. and .theta..sub.W
are unaffected by .gamma..sub.p and that the frequency of the average
values of .THETA. and .theta..sub.W increase as .gamma..sub.p increases.
FIG. 24 describes the effects of .gamma..sub.p on the fluctuation
in the average .THETA. and .theta..sub.W, half the difference between
the maximum and the minimum values of the average .THETA. and .theta..sub.W.
The effects of .gamma..sub.p on the fluctuation in the average .THETA.,
.delta..THETA., and the fluctuation in the average .theta..sub.W,
.delta..theta..sub.W, are more pronounced at lower values of .gamma..sub.p
as shown in FIG. 24.
[0231] Flow and heat transfer inside externally oscillatory squeezed
thin films supported by flexible seals in the presence of inlet
internal pressure pulsations were analyzed. The governing laminar
continuity, momentum and energy equations were properly non-dimensionalized
and reduced to simpler forms for small Reynolds numbers. The reduced
equations were solved by the alternative direction implicit (ADI)
method. The turbulence level at the upper substrate increases by
increases in both the fixation number and the frequency of the internal
pressure pulsations. However, an increase in the squeezing number
decreases the turbulence level at the upper substrate. The fluid
temperatures and the corresponding fluctuations were found to decrease
when the fixation number and the thermal squeezing parameter were
increased for both CWT and UHF conditions. Finally, fluctuations
in the heat transfer and the fluid temperatures were more pronounced
at lower frequency of internal pressure pulsations.
3. Control of Exit Flow and Thermal Conditions Using Two-Layered
Thin Films Supported by Flexible Complex Seals
[0232] Although thin films are characterized by having laminar
flows with relatively low Reynolds numbers leading to stable hydrodynamic
performance, the thickness of the thin films is small enough such
that small disturbances at one of the boundaries may cause a significant
squeezing effect at the boundary. See e.g. Langlois (1962) Quarterly
of Applied Math. XX:131-150 (flow inside isothermal oscillatory
squeezed films with fluid density varying with the pressure), Khaled
& Vafai (2002) Numerical Heat Transfer, Part A 41:451-467 and
Khaled & Vafai (2003) Int. J. Heat and Mass Transfer 46:631-641
(flow and heat transfer inside incompressible thin films having
a prescribed oscillatory squeezing at one of their boundaries),
and Khaled & Vafai (2002) Int. J. Heat and Mass Transfer 45:5107-5115
(internal pressure through the elastic behavior of the supporting
seal), which are herein incorporated by reference.
[0233] Recently, the situation where the squeezing effect at the
free substrate is initiated by thermal effects was studied. See
Khaled & Vafai (2003) ASME J. Heat Transfer 125:916-925, which
is herein incorporated by reference. As provided herein, flexible
seals with closed cavities of stagnant fluids having a relatively
large volumetric thermal expansion coefficient, flexible complex
seal, were studied. Flexible complex seals in a single layer thin
film can cause flooding of the coolant when the thermal load of
the thin film is increased over its projected capacity. As a result,
an enhancement in the cooling process is attained especially if
ultrafine suspensions are present in the coolant, a fluid that exhibits
high heat transfer performance. Ultrafine suspensions in the fluid
such as copper or aluminum particles with diameters of order nanometer
are found to enhance the effective thermal conductivity of the fluid.
See Eastman et al. (2001) Applied Physics Letters 78: 718-720, which
is herein incorporated by reference.
[0234] As provided herein, the flow and heat transfer inside an
oscillatory disturbed two-layered thin film channel supported by
flexible complex seals in the presence of suspended ultrafine particles
was studied. Oscillatory generic disturbances were imposed on the
two-layered thin film channels supported by flexible complex seals
in the presence of suspended ultrafine particles, which correspond
to disturbances in the upper substrate temperature and in the inlet
pressure of the secondary fluid layer. The governing continuity,
momentum and energy equations for both layers were non-dimensionalized
and categorized for small Reynolds numbers and negligible axial
conduction. The deformation of the supporting seals was linearly
related to both the pressure difference across the two layers and
the upper substrate's temperature based on the theory of the linear
elasticity and the principle of the volumetric thermal expansion
of the stagnant fluid filling the closed cavities of the flexible
complex seals.
[0235] As provided herein, the flow rate and heat transfer in the
main thin film channel can be increased by an increase in the softness
of the seals, the thermal squeezing parameter, the thermal dispersion
effect and the total thickness of two-layered thin film. However,
the flow rate and heat transfer in the main thin film channel decrease
as the dimensionless thermal expansion coefficient of the seals
and the squeezing number of the primary fluid layer increase. Both
the increase in thermal dispersion and the thermal squeezing parameter
for the secondary fluid layer were found to increase the stability
of the intermediate or the mobile and inflexible substrate. Furthermore,
the two-layered thin film channel was found to be more stable when
the secondary fluid flow was free of pulsations or it had relatively
a large pulsating frequency. Finally, the proposed two-layered thin
film supported by flexible complex seals, unlike other controlling
systems, does not require additional mechanical control or external
cooling devices, i.e. is self-regulating for the flow rate and temperature
of a primary fluid layer.
[0236] The following Table 6 provides the various symbols and meanings
used in this section: TABLE-US-00006 TABLE 6 B thin film length
C.sub.F correction factor for the volumetric thermal expansion coefficient
c.sub.p specific heat of the fluid D width of the thin film E* softness
index of seals supporting the intermediate or mobile and inflexible
substrate G width of closed cavity containing stagnant fluid H.sub.t
dimensionless total thickness of the two-layered thin film F.sub.T
dimensionless coefficient of the thermal expansion for the complex
seal H, h, h.sub.o dimensionless, dimensional and reference thin
film thickness h.sub.c convective heat transfer coefficient K* effective
stiffness of the sealing k thermal conductivity of the fluid k.sub.o
reference thermal conductivity of the fluid Nu lower substrate's
Nusselt number P.sub.S thermal squeezing parameter p fluid pressure
q.sub.o reference heat flux at the lower substrate for UHF T, T.sub.o
temperature in fluid and the inlet temperature t time V.sub.o reference
axial velocity U, U.sub.m dimensionless axial and average axial
velocities u dimensional axial velocity V, v dimensionless and dimensional
normal velocities X, x dimensionless and dimensional axial coordinates
Y, y dimensionless and dimensional normal coordinates .alpha. thermal
diffusivity of the fluid .beta..sub.q dimensionless amplitude of
the thermal load .beta..sub.p dimensionless amplitude of the pressure
.beta..sub.T coefficient of volumetric thermal expansion .epsilon.
perturbation parameter .phi..sub.p phase shift angle .gamma. dimensionless
frequency of the thermal load .gamma..sub.p dimensionless frequency
of the internal pressure .mu. dynamic viscosity of the fluid .theta.,
.theta..sub.m dimensionless temperature and dimensionless mean bulk
temperature .rho. density of the fluid .tau., .tau.* dimensionless
time .sigma. squeezing number .omega. reciprocal of a reference
time (reference squeezing frequency) .eta. variable transformation
for the dimensionless Y-coordinate .lamda. dimensionless dispersion
parameter .PI. dimensionless pressure .PI..sub.n dimensionless inlet
pressure .LAMBDA. reference lateral to normal velocity ratio Subscripts
i i.sup.th layer l lower substrate P due to pressure T due to thermal
expansion u upper substrate
[0237] The present invention provides flexible complex seals. The
flexible complex seals may be used in two-layered thin films are
utilized in order to regulate the flow rate of the primary fluid
layer such that excessive heating in the second layer results in
a reduction in the primary fluid flow rate. The flexible complex
seals of the present invention may be used in internal combustion
applications where the fuel flow rate should be reduced as an engine
gets overheated. The flexible complex seals of the present invention
may be used to minimize bimaterial effects of many biosensors that
are sensitive to heat and flow conditions. See Fritz et al. (2000)
Science 288:316-318, which is herein incorporated by reference.
3A. Problem Formulation and Analysis
[0238] FIG. 25 shows a two-layered thin film supported by flexible
complex seals. The lower layer contains the primary fluid flow passage
where the lower substrate is fixed (immobile and inflexible substrate)
and the upper substrate is insulated and free to move in the vertical
direction (mobile and inflexible substrate). The primary fluid flow
is that of a fluid sample, such as the fuel flow or fuel-air mixture
prior to combustion or flow of a biofluid in a fluidic cell. The
upper layer of the thin film contains a secondary fluid flow parallel
or counter to the primary fluid flow direction. This flow can have
similar properties as the primary fluid flow. This insulating assembly
is suitable for fluidic cell applications since inlet pressure pulsations
will be equal across the intermediate substrate, thereby eliminating
disturbances at the intermediate substrate. The secondary fluid
flow, however, can have different properties than the primary fluid
flow. For example, when the secondary fluid flow is initiated from
external processes such as flow of combustion residuals or the engine
coolant flow.
[0239] The heat flux of the upper substrate can be independent
of the primary fluid flow or can be the result of external processes
utilizing the primary fluid flow as in combustion processes. The
latter can be used for controlling the primary fluid flow conditions
while the former may model the increase in the ambient temperature
in a fluidic cell application, thereby preventing an increase in
the average fluid temperature in an ordinary fluidic cell avoiding
a malfunctioning of a device such as a biosensor.
[0240] The sealing assembly of the upper layer contains flexible
complex seals, closed cavities filled with a stagnant fluid having
a relatively large volumetric thermal expansion coefficient. The
upper layer also contains flexible seals in order to allow the intermediate
substrate to move in the normal direction. Any excessive heating
at the upper substrate results in an increase in the upper substrate's
temperature such that the stagnant fluid becomes warmer and expands.
This expansion along with the increase in inlet pressure in the
upper layer, if present, cause the intermediate substrate to move
downward. Thus, a compression in the film thickness of the lower
layer is attained resulting in reduction in mass flow rate within
the primary fluid flow compartment. This insulating assembly may
be used to control combustion rates since part of the excessive
heating and increased pressure due to deteriorated combustion conditions
can be utilized to prescribe the heat flux at the upper substrate.
Thus, the flow rate of the fuel in the primary fluid layer can be
reduced and combustion is controlled.
[0241] In fluidic cells, excessive heating at the upper substrate
causes compression to the primary fluid layer's thickness. Thus,
average velocity in the primary fluid layer increases, when operated
at constant flow rates, enhancing the convective heat transfer coefficient.
This causes the average fluid temperature to approach the lower
substrate temperature, thereby reducing the bimaterial effects.
When it is operated at a constant pressure or at a constant velocity,
the compression of the primary fluid layer due to excessive heating
at the upper substrate reduces the flow rate. Thus, the fluid temperatures
approach the lower substrate temperature at a shorter distance.
As such, bimaterial effects are also reduced. The flexible seals
can be placed between guiders as shown in FIG. 25B. The use of guiders
for the flexible seals, including flexible complex seals, of the
present invention minimize side expansion and maximize the transverse
thin film thickness expansion.
[0242] As provided herein, upper and lower thin films that have
small thicknesses h.sub.1 and h.sub.2, respectively, compared to
their length B and their width D.sub.1 and D.sub.2, respectively,
were analyzed. The x-axis for each layer is taken along the axial
direction of the thin film while y-axis for each layer is taken
along its thickness as shown in FIG. 25B. Further, the film thickness
was assumed to be independent of the axial direction. For example,
as in symmetric thin films having a fluid injected from the center
as shown in FIG. 25A.
[0243] Both lower and upper substrates were assumed to be fixed
(immobile and inflexible substrates) while the intermediate substrate
was free to move only in the normal direction due to the use of
flexible complex seals (mobile and inflexible substrate). The generic
motion of the intermediate substrate due to both variations of the
stagnant fluid temperature in the secondary fluid flow passage and
the induced internal pressure pulsations within both primary fluid
and secondary fluid flow passages is expressed according to the
following Equation 41: H 1 = h 1 h o = ( 1 + H T + H p ) Eq . .times.
41 where
[0244] h.sub.o is a reference thickness for the primary fluid passage
[0245] H.sub.1 is the dimensionless motion of the intermediate
substrate
[0246] H.sub.T is the dimensionless motion of the intermediate
substrate due to the volumetric thermal expansion of the stagnant
fluid
[0247] H.sub.p is the dimensionless motion of the intermediate
substrate due to the deformation in seals as a result of the internal
pressure.
[0248] The fluid was assumed to be Newtonian having constant average
properties except for the thermal conductivity. The general two-dimensional
continuity, momentum and energy equations for a laminar thin film
are given as follows: .differential. u i .differential. x i + .differential.
v i .differential. y i = 0 Eq . .times. 42 .rho. i .function. (
.differential. u i .differential. t + u i .times. .differential.
u i .differential. x i + v i .times. .differential. u i .differential.
y i ) = - .differential. p i .differential. x i + .mu. i .function.
( .differential. 2 .times. u i .differential. x i 2 + .differential.
2 .times. u i .differential. y i 2 ) Eq . .times. 43 .rho. i .function.
( .differential. v i .differential. t + u i .times. .differential.
v i .differential. x i + v i .times. .differential. v i .differential.
y i ) = - .differential. p i .differential. y i + .mu. i .function.
( .differential. 2 .times. v i .differential. x i 2 + .differential.
2 .times. v i .differential. y i 2 ) Eq . .times. 44 ( .rho. .times.
.times. c p ) i .times. ( .differential. T i .differential. t +
u i .times. .differential. T i .differential. x i + v i .times.
.differential. T i .differential. y i ) = .differential. .differential.
x i .times. ( k i .times. .differential. T i .differential. x i
) + .differential. .differential. y i .times. ( k i .times. .differential.
T i .differential. y i ) Eq . .times. 45 where
[0249] T is the fluid temperature
[0250] u is the dimensional axial velocity
[0251] v is the dimensional normal velocity
[0252] .rho. is the average fluid density
[0253] p is pressure
[0254] .mu. is the average fluid dynamic viscosity
[0255] cp is the average specific heat of the fluid
[0256] k is the thermal conductivity of the fluid
[0257] When the fluid contains suspended ultrafine particles, these
properties will be for the resulting dilute mixture so long as the
diameter of the particles is very small compared to h.sub.o. The
index "i" is "1" when analyzing the primary
fluid layer while it is "2" when analyzing the secondary
fluid layer. Equations 42-45 are non-dimensionalized using the following
dimensionless variables: X i = x i B Eq . .times. 46 .times. a Y
i = y i h o Eq . .times. 46 .times. b .tau. = .omega. .times. .times.
t Eq . .times. 46 .times. c U i = u i ( .omega. .times. .times.
B + V oi ) Eq . .times. 46 .times. d V i = v i h o .times. .omega.
Eq . .time |